1.9 - Crystal Growth of Silicon Ultra-Fine Particles

Abstract

This chapter discusses planar defects within silicon fine particles from the gas evaporation method and describes a possible growth mechanism for spherical particles that occur via a process that goes from the gas to the liquid and finally to the solid phase. The geometrical arrangements of the planar defects within a particle can be classified into about six types. The planar defect arrangements have translational symmetry. This is an important point in considering mechanisms for the crystal growth of particles. The chapter schematically illustrates the mechanism for the synthesis of silicon and silicon carbide composite Particles. This mechanism can be applied to the growth of spherical particles having planar defects with translational symmetry. The mechanism for crystal growth due to rapid cooling of silicon liquid droplets into ultrafine particles is similar to the mechanism of laser annealing of silicon thin films as used in the silicon microelectronics industry.