1.8‐V 3.1–10.6‐GHz CMOS low‐noise amplifier for ultra‐wideband applications

Abstract

AbstractA novel CMOS low‐noise amplifier (LNA) for 3.1–10.6‐GHz ultra‐wideband (UWB) applications is presented in this paper. As opposed to most of the previously reported UWB LNAs, which are based on SiGe technology, the proposed UWB LNA is designed based on chartered semiconductor manufacturing (CSM) 0.18‐μm 1.8‐V standard RFCMOS technology. The prelayout and post‐layout circuit simulation results show that low noise figure, good input and output matching, a relatively flat gain in the 3.1–10.6‐GHz UWB band, and low power consumption features are all achieved in the proposed CMOS UWB LNA. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 299–302, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20616