Abstract
The authors have fabricated epitaxially grown spin-valve-type magnetic tunnel junctions with L21-Co2FeAl0.5Si0.5 full-Heusler alloys for top and bottom electrodes and a MgO barrier. For MgO thickness tMgO=1.5nm, tunnel magnetoresistance (TMR) ratio and resistance and area product (RA) initially increase up to around 350°C and then decrease by annealing, while for tMgO=2.0 and 2.5nm, the TMR ratio increases with annealing temperature and peaks around 500°C. The TMR ratio up to 175% at RT and thermal stability up to 500°C have been achieved for tMgO=2.0nm, suggesting the large tunneling spin polarization and high thermal stability for Co2FeAl0.5Si0.5 with L21 structure.
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