Abstract
Multiple quantum-well diode lasers incorporating compressively strained InAs0.935Sb0.065 wells and tensile-strained In0.15Al0.85As0.9Sb0.1 barriers are reported. These lasers, grown on InAs substrates by molecular beam epitaxy, have emission wavelengths between 3.2 and 3.55 μm. Broad-stripe lasers have exhibited pulsed threshold current density as low as 30 A/cm2 at 80 K and the characteristic temperatures between 30 and 40 K. The maximum pulsed operating temperature is 225 K. Ridge-waveguide lasers have cw threshold current of 12 mA at 100 K, and the maximum cw operating temperature is 175 K.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
