Abstract
The behaviours of organic memory devices that are based on carbon nanotubes in two-terminal structures are reported. The memory structures were fabricated in the forms of metal-insulator-semiconductor (MIS) and metal-insulator-metal (MIM) structures. For MIS-based memories, single walled carbon nanotubes (SWCNTs) were embedded between SU8 and polymethylmethacrylate (PMMA). The devices produced a clear, clockwise hysteresis centered close to 0V. PMMA is also used for MIM memory structures as charge traps embedded between two PMMA insulating layers. The current–voltage (I–V) characteristics of these type of memory devices exhibit electrical bistability and nonvolatile memory characteristics in terms of switching between high conductive (ON) and low conductive (OFF) states.
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