Abstract
AbstractIn this paper, a 3mask IPS mode TFTLCD panel is introduced by using a new ITO patterning process. The key processes are the CHF process and new ITO etch process which is related to selective crystallization on SiNx layer. In addition, the change of etch CD bias direction from 1dimension to 2dimension reduces or eliminates the MURA defects in panel due to the variation of the distance between pixel and common electrodes.
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