Abstract
In this letter, we have reported a lateral diamond Schottky barrier diode (SBD) that was fabricated on a heteroepitaxial diamond substrate using all ion-implantation processes. The SBD exhibited a lower reverse leakage current, which resulted in an unprecedentedly high rectification ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3.6\times 10^{{5}}$ </tex-math></inline-formula> when compared to ion-implanted diamond diodes. The reverse breakdown voltage was measured to be 1.65 kV- the highest measurement ever reported among ion-implanted diamond devices. In addition, the ideality factor and Schottky barrier height were determined as 4.9 and 1.4 eV, respectively, under the forward bias conditions. This study revealed the improvement of ion-implanted diamond SBD by using high-quality heteroepitaxial diamond substrates and low channel doping concentration.
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