Abstract
For large OLEDs, the amorphous InGaZnO (a‐IGZO) thin film transistor is considered as the next generation of flexible backplane technology due to its high mobility, good uniformity, low off‐state current and low process temperature. However, the reliability of a‐IGZO TFT with OLED flexible encapsulation material is inferior at high temperature, which is speculated that the downward diffusion of H in flexible encapsulation materials leads to the threshold voltage drifting to negative. We successfully prepared a self‐aligned top‐gate IGZO thin film transistor backplane for flexible AMOLED display with a layer of metal oxide (MOX) that can effectively block H. The backplane has excellent electrical performance and reliability, which can meet the requirements of flexible display devices.
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