Abstract
A novel reading circuit based on amorphous InGaZnO thin film transistors (a‐IGZO TFTs) for flexible flash memories is proposed in this paper. The circuit contains only active devices in order to narrow its layout size; in addition to the main part, the scanning circuit and output buffer are designed for practical applications. The simulation results show its good stability and strong resistance to the design and processing variations of a‐IGZO TFTs.
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