Abstract
We have developed antimonide-based quantum-dot vertical-cavity surface-emitting laser (Sb-based QD-VCSEL) structures for operation in the 1.3 and 1.55 µm optical communication wavebands. They were fabricated on a (001)-oriented GaAs substrate and contain high-density InGaSb QDs as the active medium owing to the use of silicon atom irradiation. Testing demonstrated that they have optical-communication-waveband emission peaks at around 1.55 µm in cw wave operation at room temperature under conditions of optical pumping and current injection. Additionally, it was found that these Sb-based QD-VCSELs have threshold characteristics in the emission intensities vs both optical-pumping power and current.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
