1.54-μm electroluminescence from Si-rich erbium silicate

Abstract

We added excess silicon into erbium silicate to form silicon-rich erbium silicate (SRES) films on p-type silicon substrates by magnetron sputtering technique. After annealed at 850°C in N₂, the element contents of erbium, silicon and oxygen in the films were estimated by Rutherford backscattering spectroscopy. Room temperature Er³⁺ 1.54 μm electroluminescence from the structure of indium tin oxide (ITO)/SRES/p-Si has been studied. Its electroluminescence intensity can be markedly enhanced by optimizing the excess Si content in the SRES film.