Abstract
Silicon-based near-infrared (NIR) light sources with a simple structure are significant for circuit integration and fiber optic communications. Herein, 1530-nm electroluminescence (EL) from p-Ga2S3:Er/n+-Si junction light-emitting devices (LEDs) is reported with Er-doped Ga2S3 nanofilms as the photoemission layer and heavily doped n-type silicon as the substrate. The 1530-nm EL emission is attributed to the energy transfer between the Ga2S3 host and the Er3+ dopant, and it reaches its maximum at Er-doping concentration of 1 mol. % as the device works at −4.8 mA. The Er-related NIR EL occurs only at reverse voltages because the holes and electrons for recombination in Ga2S3:Er come from the Zener tunneling in the depletion region and the direct ITO injection, respectively. The realization of 1530-nm p-Ga2S3:Er/n+-Si LEDs offers opportunities for silicon-based integrated light sources.
Published Version
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