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Abstract
A new structure, called a Semi-Well Isolation (SWI) IC structure, suitable for high voltage IC and its process technologies are developed for 150 V consumer ICs. The SWI structure has an epitaxial layer of two different thicknesses, and different impurity profiles if desirable. High voltage elements are formed in the thick portion, the isolation region and small signal elements are formed in the thin portion. As results, both high voltage transistors and low voltage ones are optimized separately on the same chip. A color TV vertical deflection output IC, which operates from a transformerless voltage source, is developed using the SWI structure.
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