150 nm-gate p-channel MOSFET fabrication using laser annealing

Abstract

A selective laser annealing (SELA) technique was applied to fabricate 150 nm gate p-channel MOSFETs for the first time. Boron atoms in the lightly doped drain and source/drain were activated without diffusion using SELA. No punch-through effect was seen and normal transistor operation was obtained for 150 nm-gate MOSFETs. A steep subthreshold slope (S-factor) of 88.7 mV/dec and a very low leakage current were obtained.