Abstract
The formation of ohmic contact in AlGaN/GaN high electron mobility transistor (HEMT) with low surface damage by selective laser annealing is reported. With selective laser annealing, the device exhibits a smaller sheet resistance, which is 74.9% of the device with the conventional rapid thermal annealing process. The dynamic ON-resistance is 1.35 times higher than the static ON-resistance after off-state drain voltage stress of 200 V, which benefits from the low surface defects using laser annealing. While the dynamic ON-resistance with rapid thermal annealing shows 8.66 times higher than the static ON-resistance after off-state drain voltage stress of 125 V. X-ray photoelectron spectroscopy analysis indicates that the AlGaN surface damage related to the oxidation reaction under the high-temperature condition is eliminated by using selective laser annealing, even in the air ambient.
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