Abstract
Integration of diamond and GaN is a critical need for managing the heat produced when operating III-nitride devices in general and AlGaN-based high electron mobility transistors (HEMT) in specific. Methods include direct wafer bonding, planar growth of GaN on diamond, and planar growth of diamond on GaN. Each approach presents advantages and challenges. This chapter briefly presents three-dimensional (3D) integration of diamond and GaN based on selective area growth of the former and epitaxial lateral overgrowth (ELO) of the latter.
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