Abstract
This chapter gives an overview of the fabrication of monolithic microcavities containing quantum dots using wide-band gap semiconductors. The basic material properties will be briefly introduced in order to get insight into the specific problems related to the topic. The epitaxial growth of II–VI- and nitride-based distributed Bragg reflectors is described and the different formation processes of CdSe, CdTe and InGaN quantum dots are discussed in detail. In addition, the preparation of micropillar out of planar structures using a focused ion beam is reported.
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