Abstract
We demonstrated self‐patternable InZnO (IZO) thin‐film transistors (TFTs) using photosensitive precursors. UV‐irradiated films became cross‐linked and solution‐processed IZO films were patterned successfully. Compared to self‐patterned IZO TFTs using photosensitive activators, precursor‐based self‐patterned IZO TFTs have better electrical characteristics and stability due to having less organic residues.
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