Abstract
Growth of nanocrystalline diamond (NCD) via microwave plasma-enhanced chemical vapor deposition (MP-CVD) at the U.S. Naval Research Laboratory (NRL) is reviewed. The work is focused on the growth of low stress NCD films with high quality and good wafer-level thickness uniformity. Intrinsic stress of columnar-texture mode NCD growth is minimized by exploring the process parameters window of microwave power, chamber pressure, and methane/hydrogen precursor flow rate ratio. The experiments resulted in the growth of NCD films with compressive stress from 2.8MPa over a 3-in. Si substrate with thickness uniformity as high as 95%. These results demonstrate that wafer-level integration of NCD films with uniform thickness and low stress is a realistic prospect for applications where device-level thermal management is required.
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