Abstract
In this work, we report the growth and fabrication optimization of a long wavelength InAs/GaSb type-II superlattice (T2SL) nBn detector grown by metal–organic chemical vapor deposition. A GaAs like interfacial scheme was employed to grow the T2SLs matched to InAs substrates. A larger bandgap InAs/GaSb T2SL was used as an electron barrier, removing the need for AlSb based materials within this detector. At 77 K and −0.1 V, the photodetector showed a dark current density of 2.2 × 10−2 A cm−2 and a 100% cutoff wavelength of 13 µm. The external quantum efficiency was found to be 54.4% at 9 µm. The peak detectivity was found to be 4.43 × 1010 cm Hz1/2/W at 9 µm, which is very comparable with similar deep etched detectors grown by molecular beam epitaxy.
Published Version
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