Abstract
Thin-film transistor (TFT) technologies have long been used predominantly for display fabrication and are attractive for large area, low cost and flexible circuit applications. Thanks to the improving performance of thin-film metal-oxide NFC tags and data processing chips on foil [1], [2], fabs are considering the large-scale production of flexible logic circuits. However, these systems require a memory, but metal-oxide technology lacks reliable, large memory arrays. Today, data storage is limited to ROMs, flipflops and SRAMs. No memory array has been demonstrated with sufficient storage capacity and speed within the typical power and area budget. This paper demonstrates the first large, fast and low-power memory array in flexible metal-oxide technology, comparable to the Si Intel 4000 series in the seventies [3].
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call