1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability

Abstract

1200 V-Class Super-High Current Gain Transistors or SJTs developed by GeneSiC are distinguished by low leakage currents of 2. Two-stage cascaded SJTs display a record high current gain of 3475. Results from detailed on-state, blocking, switching and reliability characterization of 1200 V-class 4 mm2 and 16 mm2 SiC SJTs are presented in this paper.