Abstract
We report fabrication processes of indium gallium zinc oxide (IGZO) and low temperature poly silicon (LTPS) hybrid TFTs array technology. And the SiOx/IGZO interface quality modification and the performance of different thickness of active layer of IGZO device has been investigated by positive gate bias temperature stress method. The optimum processes conditions have been used on the 1.4” inch circular LCD to improve and pass operation tests of high temperature operation (HTO) 274hrs and temperature‐humidity‐bias (THB) 462 hrs to reach mass production phase.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
