Abstract
Results of the development of all metallorganic vapor-phase epitaxy (MOVPE) GaAs-based vertical cavity surface emitting lasers (VCSELs) with a regrown tunnel junction (TJ) emitting at ∼1150-nm wavelength are presented. A zero-bias-specific resistance of ∼3×10 −4 Ω cm 2 has been obtained for the GaAs-based TJ structure. VCSEL devices incorporating 4–7-μm and 12-μm TJ mesas exhibit an ∼2–3 mA threshold current. Room-temperature lasing spectra are multimode with an output power of 1 and 2 mW, respectively, and thermal roll-over is above 25 mA. A 2×2 VCSEL array of 3-μm aperture elements at 7-μm pitch yielding 0.8 mW room-temperature output power has been realized.
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