Abstract
State-of-the-art performance of GaAs-FET-based monolithic optoelectronic integrated circuit (OEIC) receivers is reported. The OEIC receiver achieves -3-dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Omega and the effective transimpedance into a 50 Omega load is 565 Omega . The effective transimpedance-bandwidth (TZBW) product is 6.1 THz- Omega . This ultra-high-performance receiver was implemented via a high-yield, low-cost direct ion implanted GaAs MESFET technology with a 0.6- mu m gate length and a metal-semiconductor-metal (MSM) detector with 2- mu m lines*3- mu m spacings. >
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