11 - Dilute bismide and nitride alloys for mid-IR optoelectronic devices

Abstract

Dilute bismide and nitride provide flexible bandgap and strain engineering, owing to their unique physical properties, and are attractive for mid-IR (2–12μm) optoelectronic device applications. In this chapter, we review progresses of theoretical simulations, epitaxial growth, material characterizations, and devices of dilute bismides including GaSbBi, AlSbBi, InAsBi, InAsSbBi, InGaAsBi, and InSbBi, as well as dilute nitrides including InNAs, GaNSb, InNSb, GaInNAs, and InNAsSb. The overview mainly focuses on growth optimization, optical characterizations, and theoretical calculations ending with outlook remarks about advantages and main challenges of both exotic materials.