(100)-Oriented 3C–SiC Polycrystalline Film Grown on SiO2 by Hot-Mesh Chemical Vapor Deposition Using Monomethylsilane and Hydrogen

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To fabricate a SiC-on-insulator (SiCOI) structure, the growth of cubic silicon carbide (3C–SiC) polycrystalline films on thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) utilizing high-density hydrogen radicals was investigated. The SiC films were grown at low temperatures below 900°C using monomethylsilane (MMS) as a source gas. On the basis of growth activation energy, the rate-determining step of SiC growth below 850°C was considered to be the supply of hydrogen radicals from a tungsten (W) mesh surface. From X-ray diffraction measurements, the growth of (100)-oriented 3C–SiC films was determined to be achieved at a substrate temperature of 750°C, while that of polycrystalline SiC films, at substrate temperatures above 850°C.