Abstract
A 100 μm thick silicon detector with 1 mm2 pad readout optimized for sub-nanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the H8 beam line at the CERN SPS. An excellent time resolution of (106 ± 1) ps for silicon detectors was measured with minimum ionizing particles.
Highlights
Sensor layoutThe silicon sensors for this measurement were produced by ADVACAM. They consist of 100 μm thick planar n-on-p2 with readout pads of 800 μm × 800 μm area and a pad spacing of 100 μm
- A Silicon Detector Based Betaspectrometer I E Alekseev, S V Bakhlanov, N V Bazlov et al
Waveforms acquired by the oscilloscope were later analyzed by means of an analysis routine implemented in the ROOT software [5]
Summary
The silicon sensors for this measurement were produced by ADVACAM. They consist of 100 μm thick planar n-on-p2 with readout pads of 800 μm × 800 μm area and a pad spacing of 100 μm.
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