Abstract
International Journal of Computational Engineering ScienceVol. 04, No. 03, pp. 537-541 (2003) MaterialsNo Access(100)-ORIENTED PZN-xPT THIN FILMS GROWN ON LaNiO3 SEEDING LAYERSSHUHUI YU, KUI YAO, and FRANCIS ENG HOCK TAYSHUHUI YUInstitute of Materials Research and Engineering (IMRE), 3 Research Link, Singapore, 117602, Singapore Search for more papers by this author , KUI YAOInstitute of Materials Research and Engineering (IMRE), 3 Research Link, Singapore, 117602, SingaporeCorresponding author. Search for more papers by this author , and FRANCIS ENG HOCK TAYInstitute of Materials Research and Engineering (IMRE), 3 Research Link, Singapore, 117602, Singapore Search for more papers by this author https://doi.org/10.1142/S1465876303001708Cited by:0 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail AbstractRelaxor ferroelectric (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 is attractive for many electromechanical transducer applications due to its very large piezoelectric responses, and high electromechanical coupling factor. An oriented PZN-xPT film is particularly desired to achieve further enhanced piezoelectric performance. However, it is difficult to obtain pure ferroelectric perovskite phase in a PZN-xPT thin film because of the preferential formation of detrimental pyrochlore phase. In this paper, perovskite PZN-xPT thin films were prepared by a sol-gel method on (100) Si substrates. A (100)-oriented perovskite LaNiO3 (LNO) thin film was deposited as both the bottom electrode and seeding layer; and a ZrO2 film was deposited as a buffer layer between the LNO film and the Si substrate. X-Ray Diffraction (XRD), and Scanning Electronic Microscopy (SEM) were used to examine the structure, orientation, and morphology of the PZN-xPT thin films. The dielectric and ferroelectric properties of the films were measured with an impedance analyzer and a standard ferroelectric testing system, respectively. The results showed that perovskite structure with (100) orientation was successfully obtained in the PZN-xPT films. The film exhibited a typical ferroelectric P-E hysteresis loop with a high remanent polarization.Keywords:PZN-xPTferroelectric thin filmorientationsol-gel References Y. Yang, K. Kim and H. Choi, Thin Solid Films 396, 97 (2001). Crossref, Google ScholarY. Hu, Journal of Materials Science 31, 4255 (1996). Crossref, Google ScholarH. Fanet al., Journal of the European Ceramic Society 22, 1699 (2002). Crossref, Google ScholarY. Kamisuki, T. Taniguchi and T. Takenaka, Microelectronic Engineering 29, 169 (1995). Crossref, Google ScholarS. Yuet al., Journal of Materials Research 18(3), 737 (2003). Crossref, Google ScholarS. Miyahe, S. Fujihara and T. Kimura, Journal of the European Ceramic Society 21, 1525 (2001). Google ScholarM. Mashita and M. Yoshida, Handbook of thin film engineering (Kdansha, 1998) p. 188. Google ScholarT. Yuet al., Materials Letters 26, 73 (1996). Crossref, Google ScholarC. C. Yanget al., Applied Physics Letters 66, 2643 (1995). Crossref, Google Scholar FiguresReferencesRelatedDetails Recommended Vol. 04, No. 03 Metrics History KeywordsPZN-xPTferroelectric thin filmorientationsol-gelPDF download
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Computational Engineering Science
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
