Abstract
Perovskite 0.3Pb(Zn1/3Nb2/3)O3-0.7PbTiO3 (PZN−0.7PT) thin films with (100)-orientation were prepared by a sol−gel method on Si(100) substrates. An yttrium-stabilized ZrO2 (YSZ) film was used as a buffer layer between a LaNiO3 (LNO) film and the Si substrate, where the LNO layer served as both the bottom electrode and seeding layer for the PZN−0.7PT films. The YSZ suppressed the diffusion of the LNO into the Si substrate. Our prepared LNO film on the YSZ buffer layer showed a strong (100)-orientation. Its resistivity was as low as 7.6 × 10-4 Ω·cm. The thickness of the PZN−0.7PT film fabricated on the LNO/YSZ/Si substrate was about 1.0 μm, and the average grain size was approximately 0.1−0.2 μm. We have demonstrated that the LNO seeding layer plays a key role in obtaining the perovskite structure with (100)-preferred orientation in the PZN−0.7PT film. The dielectric and ferroelectric properties of our PZN−0.7PT films on the LNO/YSZ/Si substrate were also characterized.
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