10 MΩ Quantum Hall Array Device

Abstract

We have developed \mathbf{k}\Omega$ and $1 \mathbf{M}\Omega$ quantum Hall array devices so far on GaAs/AlGaAs substrates. To realize higher quantized resistance, we designed $\pmb{10 \mathrm{M}\Omega}$ array device. The $10 \mathbf{M}\Omega$ quantum Hall array device consists of simply serially connected 775 Hall bars, and its nominal value is $10 \mathbf{M}\Omega\times(1+246.27 \mu\Omega/\Omega)$ . The channel width is $35 \mu \mathbf{m}$ , and the expected collapse current is over $20 \mu \mathbf{A}$ for each Hall bar. The Hall bars are connected with triple-connection technique to avoid the influence of contact resistance and wiring resistance on the quantized resistance value.