Abstract
10-kV silicon carbide (SiC) MOSFETs are currently being developed by a number of organizations in the U.S. with prospective applications in high-voltage and high-frequency power-electronic systems. The aim of this paper is to demonstrate the high-frequency and high-temperature capability of 10-kV SiC MOSFETs in the application of a dc/dc boost converter. In this study, 10-kV SiC MOSFET and junction barrier Schottky (JBS) diode were characterized and modeled in SPICE. Following this, a dc/dc boost converter based on a 10-kV 10-A MOSFET and a 10-kV 5-A JBS diode was designed and tested under continuous operation for frequencies up to 25 kHz. The boost converter had an output voltage of 4 kV, an output power of 4 kW, and operated with a junction temperature of 174degC for the SiC MOSFET. The fast-switching speed, low losses, and high-temperature operation capability of 10-kV SiC MOSFETs demonstrated in the dc/dc boost converter make them attractive for high-frequency and high-voltage power-conversion applications.
Published Version
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