10 Gbit/s long-wavelength monolithic integrated optoelectronic receiver grown on GaAs

Abstract

The first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 µm gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.3 µm the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than –14.7 dBm (BER = 10-9).