(10–13)-oriented semipolar GaN growth on (10–10) m-plane ScAlMgO4 substrate

Abstract

Abstract We report the growth of a GaN layer on (10–10) m-plane ScAlMgO4 (SAM) substrate. The GaN layer demonstrated (10–13) preference growth orientation. The anisotropy of the crystalline quality was distinctly observed through X-ray rocking curve taken across the sample surface over various azimuths across the orthogonal directions [0001] and [1–210] of the SAM substrate. Notably, the crystalline quality exhibited gradual degradation as the substrate is rotated around its surface normal away from the c-direction [0001] of the SAM substrate toward the a-direction [11–20]. Additionally, basal stacking faults in the (10–13)-oriented GaN were observed along [0001] direction using scanning transmission electron microscopy. Moreover, the selected area electron diffraction analysis was utilized to confirm the (10–13) growth orientation that was found to be consistent with the X-ray diffraction result. The (10–13) GaN layer exhibited a metal face through integrated differential phase contrast imaging.