Abstract
BiFeO3 thin oriented films are grown on SrTiO3(001) and ZrO2(Y2O3)(001) substrates by metalloorganic chemical vapor deposition (MOCVD) in the temperature range T= 500–800°C. Iron dipivaloylmethanate Fe(thd)3 and triphenylbismuth Bi(C6H5)3 are used as volatile precursors. It is shown that the high thermal stability of Bi(C6H5)3 leads to significant deviations of the Bi: Fe ratio in the film from their ratio in the precursor flow. An increase in the residence time of the precursor flow in the reactor makes this ratio close to unity. The film-substrate epitaxial relations are determined. It is found that the film orientation on the ZrO2(Y2O3)(001) substrate changes with increasing temperature. Optical second harmonic generation (SHG) measurements show the presence of ferroelectric ordering in the films. A significant decrease in the Curie temperature due to epitaxial stress is found. At the same time, the magnetization noticeably increases as compared to a BiFeO3 single crystal.
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