Abstract
BiFeO 3 thin films were grown on (001) SrTiO 3 and (001) ZrO 2(Y 2O 3) substrates by single source metalorganic chemical vapor deposition in the temperature range T = 500 ÷ 800 °C using Fe(thd) 3 and Bi(C 6H 5) 3 as volatile precursors. X-ray diffraction analysis shows cube-on-cube epitaxial growth of BiFeO 3 on (001) SrTiO 3. The strongly reduced bismuth transfer into the film due to the high thermal stability of Bi(C 6H 5) 3 was counterbalanced by the increase of the total pressure as well as of the residence time of the precursor flow in the reactor; the Bi/Fe ratio in the film thus becomes close to that in the precursor mixture. Optical second harmonic generation measurements have evidenced the ferroelectric ordering in BiFeO 3 films and the apparent decrease of the Curie temperature of the strained films as compared to BiFeO 3 single crystal.
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