Abstract
A model mechanism of the recovery of a gate turn-off thyristor is proposed, which takes in to account the diffusional smoothing and the possible nonmonotonic motion of the boundary between the residual plasma and the blocking field domain in a slightly-doped base. Allowance for these factors is important, in particular, for providing an excess margin with respect to the electric and thermal overloads during high-frequency operation in inductive circuits. Under such conditions, the dynamic field strengths and voltages can substantially exceed the values reached in the state of static blocking, while the period-average transient thermal losses typically amount to more than half of the total losses. Possibilities of the proposed model are illustrated for a 4H-SiC thyristor operating in the regime of a pulsed current source switch.
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