Abstract
Accurate characterization of thin-film photodetector technologies based on novel semiconductor materials is of great scientific and technological importance. The emergence of new semiconductors and their incorporation into device geometries that are analogous to those used in inorganic optoelectronics, such as photodiodes and phototransistors, has led to the adoption of experimental protocols, models and approximations developed for the characterization of inorganic photodetectors which in some cases may not be adequate in the context of thin-film photodetectors. It is important to reevaluate performance metrics to compare thin-film photodetector performance, to make them relevant in the context of the applications for which these photodetectors are being developed. This chapter reviews and defines from first principles, the performance metrics used to characterize semiconductor photodetectors. It discusses the origins of electronic noise and common experimental approaches used to characterize photodetectors.
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