Abstract
In this chapter, examples of the use of reflection high-energy electron diffraction (RHEED) in combination with pulsed laser deposition (PLD) are described. Both the use of RHEED as a real-time rate-monitoring technique as well as methods to study the nucleation and growth during PLD are briefly discussed. After a brief introduction of RHEED, a case will be made for the step-density model to describe the intensity variations encountered during deposition. An overview of the intensity variations, the intensity response during a RHEED experiment because of various initial growth modes, of the LaAlO3/SrTiO3, SrRuO3/SrTiO3, and YBa2Cu3O7/SrTiO3 systems will be given, focusing on the role of the chemical terminations of the starting growth surface. In addition to the growth on oxide single crystal, RHEED was used extensively to study the growth of oxide (buffer) layers on Si and other semiconductors. Finally, RHEED can be used postdeposition to reveal various properties of the as-deposited thin film.
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