1/f noise in ion-implanted resistors between 77 and 300 K

Abstract

The conductivity, the Hall effect, and the noise of ion-implanted resistors is measured between 77 and 300 K. The temperature dependence of the carrier concentration in these boron-doped layers cannot be explained by the freeze-out of the boron acceptor level. Possible explanations are a temperature-dependent Hall factor r and a distribution of trap levels 0.1–0.2 eV above the valence-band edge. The mobility μ can be determined from the conductivity and the Hall-effect data. The mobility shows the highest value after annealing at 750 °C. The value of the 1/f noise parameter α shows a weak temperature dependence after annealing at 450, 550, 650, and 900 °C. After annealing at 750 °C the α value decreases from 10−5 at 300 K to lower than 2×10−7 at 77 K. The highest mobility μ gives the lowest 1/f noise parameter α. This indicates that more defects and lattice damage give more 1/f noise. Additional scattering mechanisms have much more influence on the 1/f noise parameter α than on the mobility μ.