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Abstract
An analytical pseudo-two-dimensional (2-D) model for the transconductance generation factor (gm/Id) of cylindrical surrounding gate (SRG) metal-oxide-semiconductor field effect transistor (MOSFET) is presented. The model has been developed by applying Gauss's law in the cylindrical channel depletion region for undoped or lightly doped silicon SRG MOSFET working in the subthreshold regime. In order to validate the model, the modelled expressions are compared with the simulated characteristics obtained from the numerical device simulator. A systematic investigation of analogue performance figures of merit are reported for different dimensions of SRG MOSFET. The obtained gm/Id model has been implemented in modelling the 1/f low-frequency noise (LFN). The variation of 1/f LFN is obtained and investigated for different device parameters.
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