Abstract
The concept of power semiconductor lasers based on asymmetric separate confinement heterostructures is applied to the AlInGaAs/InP heterostructures. The laser heterostructures emitting at the wavelength 1.75–1.8 μm are fabricated by metal-organic chemical vapor deposition. Based on the heterostructures grown, high-power multimode laser diodes of the mesa-strip design with the maximum emission power 2.0 W in the continuous mode at room temperature and 20 W in the pulsed operation mode are fabricated. The internal optical losses in the lasers were reduced to 2.2 cm−1.
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