Abstract
In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Perot and ring lasers, lasing in the 1.55-mum wavelength range and employing narrow deeply etched ridge waveguides (1.65 mum width). The performance of the lasers appears not affected by sidewall recombination effects of the deeply etched waveguide structure. Narrow deeply etched ridge waveguides can be mono-mode and allow for a small bending radius to realize compact integrated devices. As a demonstration, we present results on a compact ring laser with a free spectral range close to 40 GHz. Due to the low absorption of the QDs, unpumped output waveguides can be used
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
