Abstract
Buried ridge stripe lasers have been grown on InP in two steps by gas source molecular beam epitaxy. The active structure consists of a compressively strained layer multi quantum well with an equivalent wavelength emission at 1.5 μm. The stripe was defined by reactive ion etching. A threshold current of 22 mA was reproducibly obtained on a laser length of 500 μm. A CW output power of 48 mW per facet was achieved. In addition, preliminary accelerated aging tests have shown the high reliability of the structure.
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