Abstract
By doping an erbium complex, erbium (III) 2, 4-pentanedionate (Er(acac)3), into the ALQ layer, we fabricate a series of infrared emission organic light emitting diodes (OLED) with structures of p-Si/SiO2/NPB/ALQ/ ALQ:Er(acac)3/ALQ/Sm/Au, where p-Si is the anode and Sm/Au is the cathode. The 1.54 µm emission from Er3+ is observed. The impact of doping level of Er(acac)3 in ALQ on 1.54 µm electroluminescence (EL) intensity is studied, and the best mass ratio of Er(acac)3 to ALQ is found at 1 : 60. A competitive EL mechanism from the ALQ and Er(acac)3 is found and the Er3+ ions excitations are attributed to energy transfer from the ligands to Er ions.
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