Opto‐electrical properties of HAT‐CN based organic light emitting diode

Abstract

1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN)-based organic light emitting diode (OLED) have been simulated, fabricated, and characterised. HAT-CN has been inserted as an organic interlayer at the indium tin oxide/organic interface. It has been observed that there is a significant increase in the current density of the device. Also, the electroluminescence (EL) intensity of the OLED device is in contrast with J–V characteristics, i.e. EL intensity and current density is maximum at 22 nm Alq3 layer thickness. There is an approximate increase of 0.13 A/cm2 in current density with respect to the applied voltage when the Alq3 thickness is varied from 20 to 22 nm. The maximum current density obtained is 0.4 A/cm2. EL intensity is approximately increased by 30% at the same Alq3 thickness. A comparison of fabricated and simulated optoelectronic devices has also been reported in this work. They have found proximity between the fabricated and simulated devices.