Abstract
We have studied the photoluminescence at 1.5 μm of the 4I13/2→4I15/2 transition of the Er3+ ion, incorporated as ErF3 into polycrystalline YF3, LuF3, and LaF3 films, deposited onto SiO2 or Si wafers. We conclude that LaF3 is an exceptionally suitable host for Er3+, since it permits high Er3+ concentrations, long lifetimes of the excited level, and a strong Stark splitting. This results in a spectral shape suitable for broadband optical amplifiers with a usable optical bandwidth exceeding 8000 GHz (Δλ≂60 nm).
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