Abstract
High-power 1.48-/spl mu/m erbium-doped fiber amplifier pumping InGaAsP MQW laser diodes (LDs) have been investigated using all selective metal-organic vapor phase epitaxy grown (ASM) fabrication method. The method provided a precise dimension control of multiquantum-well active layers and current blocking layers, resulting in excellent current blocking characteristics and extremely uniform lasing characteristics even at high injection current. The average light output power of 262 mW at 1 A with a standard deviation of as small as 1.4 mW for 20 consecutive LDs has been achieved.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
