Abstract
In this paper, stepped doping profile in alternate pillars of Superjunction IGBT structure has been presented. The proposed device structure follows variation doping profile in N and P pillars. The beginning point of avalanche breakdown moves from edges to center of the epitaxial region. Due to this structural modification, we have revealed that the area specific ON resistance of proposed device is reduced by 8% without affecting breakdown voltage (BV). The simulation results show that 15% and 6% reduction in turn-off energy loss (Eoff) and on-state voltage (Von) is achieved. In the proposed device we have improved the trade of factor between ON resistance - breakdown voltage and Eoff -Von. Further temperature analysis is also carried out and it is observed that the proposed device shows no degradation even at higher operating temperature.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
