Abstract
A 1.3-μm wavelength, strained multiple quantum well InGaAsP-InP folded-cavity surface-emitting laser was fabricated using CH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> :H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> reactive ion etching to form the 45/spl deg/ angled vertical output facet. A pulsed threshold current of 45 mA and a 20% efficiency for the surface-emitted light were achieved for 550 μm-long by 5 μm-wide devices. The threshold current is the lowest reported for folded-cavity surface-emitting lasers operating at this wavelength, making the devices suitable for many optoelectronic smart pixel and interconnection applications. To our knowledge, this is the first demonstration of an InP-based folded-cavity structure using CH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> :H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> reactive ion etching.
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